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| Power F-MOS FETs 2SK2375 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 15.50.5 4.5 3.20.1 10.0 3.00.3 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 5 26.50.5 5 23.4 22.00.5 2.0 1.2 5 18.60.5 5 5 4.0 2.00.2 1.10.1 2.0 0.70.1 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 900 30 8 16 60 100 3 150 -55 to +150 Unit V V 5.450.3 3.30.3 0.70.1 5.450.3 5.50.3 5 1 2 3 A A mJ W C C 1: Gate 2: Drain 3: Source TOP-3E Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25C Ta = 25C L = 1.9mH, IL = 8A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD = 200V, ID = 4A VGS = 10V, RL = 50 Conditions VDS = 720V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 4A VDS = 25V, ID = 4A IDR = 8A, VGS = 0 1800 VDS = 20V, VGS = 0, f = 1MHz 200 90 30 70 80 250 1.25 41.67 3 900 2 1.3 5.5 -1.6 5 1.7 min typ max 100 1 Unit A A V V S V pF pF pF ns ns ns ns C/W C/W Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere 2.0 1 Power F-MOS FETs Area of safe operation (ASO) 100 120 2SK2375 PD Ta Allowable power dissipation PD (W) (1) TC=Ta (2) Without heat sink (PD=3W) 7 VDS=25V 6 TC=150C ID VGS Non repetitive pulse TC=25C 30 IDP 10 ID 100 Drain current ID (A) Drain current ID (A) t=100s 5 80 (1) 60 4 3 1ms 10ms 100ms 3 1 40 2 150C 100C 25C 0C 0 1 2 3 4 5 6 7 8 0.3 DC 20 (2) 1 0.1 1 3 10 30 100 300 1000 0 0 20 40 60 80 100 120 140 160 0 Drain to source voltage VDS (V) Ambient temperature Ta (C) Gate to source voltage VGS (V) Vth TC 6 70 VDS=25V ID=1mA 5 VDS VGS Drain to source ON-resistance RDS(on) () 5 TC=25C RDS(on) ID VGS=10V Drain to source voltage VDS (V) Gate threshold voltage Vth (V) 60 4 TC=150C 3 100C 2 25C 1 0C 50 ID=16A 4 40 3 30 2 20 8A 10 4A 2A 1 0 0 25 50 75 100 125 150 0 0 5 10 15 20 25 30 0 0 1 2 3 4 5 6 7 8 Case temperature TC (C) Gate to source voltage VGS (V) Drain current ID (A) | Yfs | ID Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 6 10000 Ciss, Coss, Crss VDS 600 f=1MHz TC=25C ton, tf, td(off) ID VDD=200V VGS=10V TC=25C Forward transfer admittance |Yfs| (S) VDS=25V 5 25C 100C Switching time ton,tf,td(off) (ns) TC=0C 3000 Ciss 500 4 1000 400 3 150C 2 300 300 td(off) 200 ton 100 tf 100 Coss Crss 1 30 0 0 1 2 3 4 5 6 7 8 10 0 40 80 120 160 200 0 0 2 4 6 8 10 12 Drain current ID (A) Drain to source voltage VDS (V) Drain current ID (A) 2 |
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